By Olabode Olakanmi November 28, 2012 Leave a Comment

Vishay Intertechnology, Inc. has released the Si7655DN, the industry’s first – 20 V p-channel MOSFET in a 3.3 mm by 3.3 mm package to offer on-resistance of just 4.8 m? maximum at a 4.5 V gate drive. The Si7655DN is also the first device to be released in a new version of the Vishay Siliconix PowerPAK® 1212 package, which enables lower-RDS(on) devices while providing a 28 % slimmer nominal profile of 0.75 mm and maintaining the same PCB land pattern.

 

Applications for the Si7655DN will include load switching and hot swapping in industrial systems; adaptor, battery, and load switches in charger circuits; and power management for smart phones, tablet PCs, and other mobile computing devices. The Si7655DN will also be used for redundancy switch, OR-ing, and supervisory applications in fixed telecom, cell phone base station, and server/computer systems.

 

 

Utilizing the new PowerPAK 1212 package version and Vishay Siliconix’s industry- leading p-channel Gen III technology, the Si7655DN provides industry-low maximum on-resistance of 3.6 m? (- 10 V), 4.8 m? (- 4.5 V), and 8.5 m? (- 2.5 V). These specifications represent an improvement of 17 % or better over the next best competing – 20 V devices.

 

 

The low on-resistance of the Si7655DN will allow designers to achieve lower voltage drops in their circuits and promote more efficient use of power and longer battery run times, while its 3.3 mm by 3.3 mm by 0.75 mm PowerPAK 1212-8S package will help to save valuable space.

 

 

The Si7655DN is the latest addition to Vishay’s family of TrenchFET Gen III p-channel MOSFETs. More information on the p-channel TrenchFET Gen III family is available at www.vishay.com/doc?49996.

 

Samples and production quantities of the new Si7655DN are available now, with lead times of 12 to 14 weeks for larger orders.

Source: www.vishay.com.

About

Olabode Olakanmi is a practicing embedded systems expert. He holds a bachelor's degree in electronic and electrical engineering from Obafemi Awolowo University, Ile-Ife, Nigeria.

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